Graphite Susceptors

Graphite Purity and Dimensional Precision Define the Epitaxial Layer

In epitaxial deposition, material decisions at the susceptor level manifest directly in layer quality at the wafer. Purity, dimensional uniformity, and coating adhesion govern temperature distribution across the wafer surface — and any variance translates into yield loss that compounds across a production run. Max Graphite's susceptors are machined from isostatic graphite grades qualified for semiconductor process environments, finished to exacting dimensional tolerances, and certified before shipment. Our integrated SiC coating capability means the graphite substrate and coating are developed and optimized together — not independently sourced and assembled without process alignment.

• Ultra-high-purity graphite substrates. Qualified isostatic grades with full purity traceability and lot-level certification delivered on every component.
• Dimensional consistency across form factors. High-precision machining to tight tolerances for barrel, pancake, satellite, and single-wafer geometries, ensuring uniform profiles and repeatable thermal performance run to run.
• Integrated SiC coating in-house. CTE-matched silicon carbide coatings applied under controlled process conditions, with thickness homogeneity and surface quality validated for extended service life and chemical resistance.
• Single-source supply and qualification simplicity. Substrate, coating, cleaning, and finishing are supplied under one quality system — reducing supplier count and streamlining component qualification for procurement and process engineering teams.
• Cross-platform and multi-technology range. Susceptors supplied for Si epitaxy, SiC epitaxy, GaN/GaAs/InP MOCVD, HVPE, and LED production reactors across all major OEM platforms and reactor configurations.

Applications

• Silicon (Si) epitaxy reactors — barrel, pancake, and single-wafer configurations
• Silicon carbide (SiC) epitaxy reactors
• GaN MOCVD reactors
• GaAs and InP MOCVD reactors
• Aluminum nitride (AlN) and other III-V compound MOCVD processes
• Hydride vapor phase epitaxy (HVPE)
• LED wafer production equipment
• Ion implantation process equipment

Max Graphite Susceptor Solutions

Barrel Susceptors

Max Graphite machines barrel susceptors from qualified isostatic graphite grades for applied and LPE epitaxy reactors. SiC coating is available to OEM-specified tolerances and surface finish requirements, with dimensional compliance certification included.

Pancake Susceptors

We supply pancake susceptors for LPE, CSD, and Gemini-type epitaxy units, precision-machined and certified to close dimensional tolerances, with coating options matched to specific process chemistries and cleaning cycles.

Single-Wafer Susceptors

Single-wafer susceptors for applied and ASM-type reactor platforms are produced to the tight tolerances required in high-volume silicon and SiC epitaxy, with full material and dimensional traceability from substrate grade to finished coated component.

MOCVD Satellite Platforms and Pocket Carriers

Max Graphite supplies satellite platforms and pocket-configured wafer carriers for GaN, GaAs, InP, and AlN MOCVD reactors, engineered to the rotation geometry, pocket depth, and thermal uniformity requirements of each reactor platform.

Associated Susceptor Assembly Components

• Heaters — meander and resistance configurations for inductively and resistively heated systems
• Heat shields and thermal insulation rings
• Support crucibles and liner components
• Focus rings and edge rings

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